Tuesday, January 26, 2010

irf9540 datasheet

irf9540 datasheet

IRF9540, RF1S9540SM

19A, 100V, 0.200 Ohm, P-Channel Power


These are P-Channel enhancement mode silicon gate

power field effect transistors. They are advanced power

MOSFETs designed, tested, and guaranteed to withstand a

specified level of energy in the breakdown avalanche mode

of operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching

convertors, motor drivers, relay drivers, and drivers for high

power bipolar switching transistors requiring high speed and

low gate drive power. They can be operated directly from

integrated circuits.

Formerly Developmental Type TA17521.

• 19A, 100V

• rDS(ON) = 0.200Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”
download irf9540 datasheet

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