Tuesday, January 26, 2010

irf3205 datasheet

IRF3205



HEXFET® Power MOSFET
 

Description



Advanced HEXFET® Power MOSFETs from International



Rectifier utilize advanced processing techniques to achieve


extremely low on-resistance per silicon area. This


benefit, combined with the fast switching speed and


ruggedized device design that HEXFET power MOSFETs


are well known for, provides the designer with an extremely


efficient and reliable device for use in a wide variety of


applications.


The TO-220 package is universally preferred for all


commercial-industrial applications at power dissipation


levels to approximately 50 watts. The low thermal


resistance and low package cost of the TO-220 contribute


to its wide acceptance throughout the industry.


l Advanced Process Technology


l Ultra Low On-Resistance


l Dynamic dv/dt Rating


l 175°C Operating Temperature


l Fast Switching


l Fully Avalanche Rated


download irf3205 datasheet

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