Tuesday, January 26, 2010

irf9520 datasheet

irf9520 datasheet

6A, 100V, 0.600 Ohm, P-Channel Power


This advanced power MOSFET is designed, tested, and

guaranteed to withstand a specified level of energy in the

breakdown avalanche mode of operation. These are

P-Channel enhancement mode silicon gate power field

effect transistors designed for applications such as switching

regulators, switching converters, motor drivers, relay drivers

and drivers for high power bipolar switching transistors

requiring high speed and low gate drive power. These types

can be operated directly from integrated circuits.

Formerly developmental type TA17501

• 6A, 100V

• rDS(ON) = 0.600Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance
download datasheet

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