Tuesday, January 26, 2010

irf9530 datasheet

irf9530 datasheet

12A, 100V, 0.300 Ohm, P-Channel Power


These are P-Channel enhancement mode silicon gate power

field effect transistors. They are advanced power MOSFETs

designed, tested, and guaranteed to withstand a specified

level of energy in the breakdown avalanche mode of

operation. All of these power MOSFETs are designed for

applications such as switching regulators, switching

convertors, motor drivers, relay drivers, and drivers for high

power bipolar switching transistors requiring high speed and

low gate drive power. The high input impedance allows these

types to be operated directly from integrated circuits.

Formerly developmental type TA17511.

• 12A, 100V

• rDS(ON) = 0.300Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Related Literature

- TB334, “Guidelines for Soldering Surface Mount

Components to PC Boards”
download irf9530 datasheet

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