Tuesday, January 26, 2010

buz11 datasheet

buz11 datasheet

30A, 50V, 0.040 Ohm, N-Channel Power


This is an N-Channel enhancement mode silicon gate power

field effect transistor designed for applications such as

switching regulators, switching converters, motor drivers,

relay drivers and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

This type can be operated directly from integrated circuits.

Formerly developmental type TA9771.

• 30A, 50V

• rDS(ON) = 0.040Ω

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• Majority Carrier Device

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

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