A Novel Fermi Level Controlled High Voltage Transistor Preventing
Fermi-level Controlled HVT(FCHVT) is a new
transistor which improves hump by turning off the FETp.
Controlling doping concentrations of gate edge of
MOSFET makes the differences of work function of poly-
gate shift the Fermi-level between FETp and FETi, and
humps are improved by increase of Vth of FETp. We
explored to control gate doping concentration with ion
implantation on MOSFET as illustrated in Fig. 2
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