irf840 datasheet

irf840 datasheet

8A, 500V, 0.850 Ohm, N-Channel Power



MOSFET


This N-Channel enhancement mode silicon gate power field


effect transistor is an advanced power MOSFET designed,

tested, and guaranteed to withstand a specified level of


energy in the breakdown avalanche mode of operation. All of


these power MOSFETs are designed for applications such


as switching regulators, switching converters, motor drivers,


relay drivers, and drivers for high power bipolar switching


transistors requiring high speed and low gate drive power.


These types can be operated directly from integrated


circuits.


Formerly developmental type TA17425.
 
 
Features



• 8A, 500V


• rDS(ON) = 0.850Ω


• Single Pulse Avalanche Energy Rated


• SOA is Power Dissipation Limited


• Nanosecond Switching Speeds


• Linear Transfer Characteristics


• High Input Impedance


• Related Literature


- TB334 “Guidelines for Soldering Surface Mount


Components to PC Boards”
 
download irf840 datasheet