Tuesday, November 23, 2010

UM3561 electronic siren circuit diagram

This siren alarm circuit diagram is based on a specialized IC UM3561 , which is a low power CMOS LSI specially designed for this type of applications . The UM3561 contains all needed parts ( oscillator , selector circuits , programmed mask ROM ) to simulate siren sound using few external components .


The siren circuit require a power supply circuit around 3 volts and has a low current . The UM3561 siren sound generator circuit has possibility to generate four types of sounds : police siren , fire engine siren , ambulance siren and machine gun sound .
 
The transistor used in this project must be 2SC9013 , 2SC8050 or similar type .
 

The speaker used at the output must have 8 ohms impedance and a 0.2 watts power .

As you can see in these three circuit diagrams , the configuration for the siren is very simple .
UM3561 electronic siren circuit diagram
Police siren , fire engine siren , ambulance siren and machine gun sound .






Police siren , fire engine siren , ambulance siren .

 
 
 
 
 
 
 
 
Police siren and machine gun sound .
 

source :http://www.electroniq.net

Simple mixer circuit – Common base

The simple mixer schematic is built on common base principle, where input voltages are transformed in alternative currents wich are summed to form the alternative current component for the collector. The total amplification is R6 - Ri, where Ri is one of the input resistors. I’ve build this mixer for a little transmitter and works great.

Simple mixer circuit – Common base


















Simple mixer circuit – Common base
source :http://electroschematics.com

Simple mixer circuit * Common base

Monday, November 15, 2010

IRF740 Datasheet , power MOSFET

N - CHANNEL 400V - 0.48 Ω - 10 A - TO-220
PowerMESH MOSFET

This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources.

APPLICATIONS
# HIGH CURRENT SWITCHING
# UNINTERRUPTIBLE POWER SUPPLY (UPS
# DC/DC COVERTERS FOR TELECOM,
# INDUSTRIAL, AND LIGHTING EQUIPMENT

 MOSFET, N, 400V, 10A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:400V; Current, Id Cont:10A; Resistance, Rds On:0.55ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:40A; Power Dissipation:125W; Power, Pd:125W; Thermal Resistance, Junction to Case A:1 C/W; Voltage, Vds Max:400V

  search keyword :
IRF740, IRF740 Datasheet, IRF740 MOSFET N Channel Transistor, IRF740

download datasheet 

Power MOSFET IRFP264, SiHFP264 datasheet

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole.
It also provides greater creepage distances between pins to meet the requirements of most safety specifications.

FEATURES


• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available


Maximum Power Dissipation = 280w
Drain-Source Voltage = 250v
Gate-Source Voltage = ± 20

ORDERING INFORMATION :

Package : TO-247

Lead (Pb)-free : IRFP264PbF , SiHFP264-E3 .

SnPb : IRFP264 , SiHFP264 .


search keyword :
IRFP264 datasheet, IRFP264 circuit, IRFP264 data shee Power MOSFET

download datasheet 

IRFP250 free Datasheet

33A, 200V, 0.085 Ohm, N-Channel
Power MOSFET

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits Formerly developmental type TA9295.

IRFP250 FET 200V 33A 180W
IRFP250

Features

• 33A, 200V
•rDS(ON) = 0.085Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Moun
Components to PC Boards”

search keyword :

Power MOSFET. IRFP250 , IRFP250 datasheet,IRFP250 Pinout , IRFP250 MOSFET N Channel Transistor,

download datasheet 

Wednesday, November 10, 2010

str6707

The STR-S6707, STR-S6708, and STR-S6709 are specifically designed to meet the requirement for increased integration and reliabil- ity in off-line quasi-resonant flyback converters.  These devices incorpo-
rate the primary control and proportional drive circuit with a third- generation high-voltage bipolar switching transistor.
Crucial system parameters such as maximum ON time and OFF
time are fixed during manufacture.  Local control circuit decoupling and
layout are optimized within each device.
Cycle-by-cycle current limiting, under-voltage lock-out with hyster-
esis, over-voltage protection, and thermal shutdown protect these
devices during all normal and overload conditions.  Over-voltage
protection and thermal shutdown are latched after a short delay.  A
versatile triple-level inhibit circuit includes the OFF time synchronization
required to establish quasi-resonant operation.  The inhibit function has
also been expanded to initiate operation in stand-by mode in which the
power supply delivers a small fraction of the steady-state output power.
The dual requirements of dielectric isolation and low transient thermal
impedance and steady-state thermal resistance are satisfied in an over-
molded single-in-line power package.
Proven in substantial volumes, these devices and their fixed-
frequency counterparts represent a significant advance in off-line SMPS
reliability growth and integration.


FEATURES
  Quasi-Resonant Operation for Low EMI and High Efficiency
  Output Power to 220 W
  Low-Power Output Standby Mode
  Pulse-by-Pulse Over-Current Protection
  Latched Over-Voltage and Thermal Protection
  Third-Generation Switching Transistor with Proportional Drive
  Maximum ON Time and Off Time Set During Manufacture
  Internal Under-Voltage Lockout with Hysteresis
  Over-Molded SIP with Integral Isolated Heat Spreader

 OFF-LINE SWITCHING REGULATORS – WITH BIPOLAR SWITCHING TRANSISTOR
STR6707 datasheet, STR6707 datasheets, STR6707 datenblatt, STR6707

 http://www.tube-tester.com/sites/nixie/nixie-clock-cd47/data/STRS6707.pdf